The barrier potential (built-in potential) of a silicon PN junction is approximately 0.7 V at room temperature. This potential develops across the depletion region due to the diffusion of charge carriers when the P-type and N-type materials are joined. It acts as a potential barrier that opposes further diffusion of majority carriers. For comparison, a germanium PN junction has a typical barrier potential of about 0.3 V.
The barrier potential of a silicon PN junction is approximately ______.
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Question context
This question is part of 📡 Electronics and Communication Engineering (ECE) within the broader 🛠️ Engineering Essentials subject and appears in the PTS Pakistan Testing Service preparation collection. Reviewing the answer together with nearby questions helps reinforce the underlying concept and identify how it may appear in competitive exams.